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1. Erratum: Analysis of interface trap states in InAlN/AlN/GaN heterostructures (Semiconductor Science and Technology. 29 2014 (095011)) SCOPUS EI SCOPUS

作者:Zhou, Yang ;Lin, Zhaojun ;Luan, Chongbiao ;Zhao, Jingtao ;Yang, Qihao ;Yang, Ming ;Wang, Yutang ;Feng, Zhihong ;Lv, Yuanjie

作者机构:[Zhou, Y] School of Physics, Shandong University, Jinan, 250100, China;[ Lin, Z] School of Physics, Shandong University, Jinan, 250100, China;[ Luan, C] School of Physics, Shandong University, Jinan, 250100, China;[ Zhao, J] School of Physics, Shandong University, Jinan, 250100, China;[ Yang, Q] School of Physics, Shandong University, Jinan, 250100, China;[ Yang, M] School of Physics, Shandong University, Jinan, 250100, China;[ Wang, Y] School of Physics, Shandong University, Jinan, 250100, China;[ Feng, Z] National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China;[ Lv, Y] National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China

来源:Semiconductor Science and Technology,2014,Vol.29,Issue.11

JCR分区(WOS):Q1

最新影响因子:2.305

当年影响因子:2.19

资源类型:期刊论文

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