标题:Optical testing method analysis of carrier transport in GaAs PCSS
作者:Luan C.; Zhao J.; Li H.; Xiao L.; Wang C.; Xiao J.; Ma X.; Xu X.;等
作者机构:[Luan, C] Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, Mianyang, 621900, China;[ Zhao, J] Key Laboratory of Pul 更多
通讯作者:Li, H(lihongtao-ifp@caep.cn)
通讯作者地址:[Li, H] Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, China;
来源:Vacuum
出版年:2020
DOI:10.1016/j.vacuum.2020.109771
关键词:Carrier density; Optical testing method; PCSS; Transport
摘要:Measurement of the carrier transport in the GaAs photoconductive semiconductor switch (PCSS) is important for the study of the GaAs PCSS current filament and the design of improved GaAs PCSS devices. In this study, an optical testing method was proposed for the measurement of the time-dependent carrier density distribution in the GaAs PCSS. The measured electron density curves show that the carrier density distribution between the two electrodes is nonuniform for Δt = 0, and as Δt increase from 0.6 ns to 6 ns, a large number of carriers concentrate near the anode of the GaAs PCSS. These phenomena are analyzed in detail and the measured curves are found to be in good agreement with the simulation results. © 2020 Elsevier Ltd
收录类别:SCOPUS
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85091063852&doi=10.1016%2fj.vacuum.2020.109771&partnerID=40&md5=41279f08643c75edcd2a218a919b8062
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