标题：Robust large-gap quantum spin Hall insulators in chemically decorated arsenene films
作者：Wang, Dongchao; Chen, Li; Shi, Changmin; Wang, Xiaoli; Cui, Guangliang; Zhang, Pinhua; Chen, Yeqing
作者机构：[Wang, Dongchao; Chen, Li; Shi, Changmin; Wang, Xiaoli; Cui, Guangliang; Zhang, Pinhua; Chen, Yeqing] Linyi Univ, Inst Condensed Matter Phys, Linyi 27 更多 通讯作者地址：[Chen, L]Linyi Univ, Inst Condensed Matter Phys, Linyi 276000, Shandong, Peoples R China;[Chen, L]Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peo 更多
来源：NEW JOURNAL OF PHYSICS
关键词：quantum spin Hall insulator; arsenene film; chemical decoration;; first-principles calculations
摘要：Based on first-principles calculations, we propose one new category of two-dimensional topological insulators (2D TIs) in chemically functionalized (-CH3 and -OH) arsenene films. The results show that the surface decorated arsenene (AsCH3 and AsOH) films are intrinsic 2D TIs with sizeable bulk gap. The bulk energy gaps are 0.184 eV, and 0.304 eV in AsCH3 and AsOH films, respectively. Such large bulk gaps make them suitable to realize quantum spin Hall effect in an experimentally accessible temperature regime. Topologically helical edge states in these systems are desirable for dissipationless transport. Moreover, we find that the topological properties in these systems are robust against mechanical deformation by exerting biaxial strain. These novel 2D TIs with large bulk gaps are potential candidate in future electronic devices with ultralow dissipation.