标题：Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
作者：Zhong, Hai; Wen, Yan; Zhao, Yuelei; Zhang, Qiang; Huang, Qikun; Chen, Yanxue; Cai, Jianwang; Zhang, Xixiang; Li, Run-Wei; Bai, Lihui 更多 作者机构：[Zhong, Hai; Huang, Qikun; Chen, Yanxue; Bai, Lihui; Kang, Shishou; Yan, Shishen; Tian, Yufeng] Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Ji 更多
通讯作者：Yan, SS;Tian, YF;Yan, SS;Yan, Shishen
通讯作者地址：[Yan, SS; Tian, YF]Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Shandong, Peoples R China;[Yan, SS]Univ Jinan, Spintron Inst, Jin 更多
来源：ADVANCED FUNCTIONAL MATERIALS
关键词：magnetic tunneling junctions; magnetoresistance; multilevel states;; nonvolatile memory; remanent magnetization
摘要：Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.