标题:Computational Design of Silicon Contacts on 2D Transition-Metal Dichalcogenides: The Roles of Crystalline Orientation, Doping Level, Passivation and Interfacial Layer
作者:Ma, Xiaolei ;Fan, Zhiqiang ;Wu, Jixuan ;Jiang, Xiangwei ;Chen, Jiezhi
作者机构:[Ma, X] School of Information Science and Engineering, Shandong University, Qingdao, China;[ Fan, Z] Institute of Semiconductors, Chinese Academy of S 更多
会议名称:64th Annual IEEE International Electron Devices Meeting, IEDM 2018
会议日期:1 December 2018 through 5 December 2018
来源:Technical Digest - International Electron Devices Meeting, IEDM
出版年:2019
卷:2018-December
页码:24.2.1-24.2.4
DOI:10.1109/IEDM.2018.8614557
摘要:Systematic numerical simulations based on density functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism have been carried out for comprehensive understanding of the physical properties of silicon (Si) contacts on monolayer transition metal dichalcogenides (TMDs). The effects of different contact crystalline orientations including Si (001), (110) and (111), Si doping levels, possible surface passivation such as H- and F-, as well as interfacial layer (IL) engineering using BN and Graphene are thoroughly discussed. On the one hand, it is found that the contact properties of different crystalline orientations follow similar trend, and the doping modulation of the Schottky barrier height (SBH) remains inappreciable in a practical range of doping level. On the other hand, H- and F- passivation are found to be effective ways to diverge the intrinsic contact into n - and p - type contacts, respectively. In addition, it is found that surprisingly good p-type contact with vanishing p-SBH could be formed by using monolayer BN as the IL. © 2018 IEEE.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061807414&doi=10.1109%2fIEDM.2018.8614557&partnerID=40&md5=59fb8d781dc78cac9cb524688443aace
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