标题:The Raman effects in gamma-LiAlO2 induced by low-energy Ga ion implantation
作者:Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Wang, Tie-Jun; Yu, Xiao-Fei; Wang, Xue-Lin
通讯作者:Wang, XL
作者机构:[Wang, Xue-Lin] Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China.; Shandong Univ, Key Lab Particle Phys & Particle 更多
会议名称:20th International Conference on Ion Beam Modification of Materials (IBMM)
会议日期:OCT 30-NOV 04, 2016
来源:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版年:2017
卷:409
页码:72-75
DOI:10.1016/j.nimb.2017.05.013
关键词:Ion implantation; Optical material; Raman spectroscopy
摘要:The tetragonal gamma-LiAlO2 crystal, known as a promising solid breeding material in future fusion reactors, has attracted much attention for its irradiation effects. This work focused on the Raman effects in ion implanted y-LiAlO2. Ga ions of 30, 80 and 150 keV were implanted on the z-cut gamma-LiAlO2 sample surfaces at a fluence of 1 x 10(14) ions/cm(2) or 1 x 10(15) ions/cm(2). The average ion range varied from 230 to 910 A. The Raman spectra were collected from the implanted surfaces before and after the implantation. Evident changes were reflected in the Raman modes intensities, with abnormal increments for the most detected modes. According to the assignments of Raman modes, the Al-O vibration was enhanced to a greater extent than the Li-Al-O vibration, and the LiO4-AlO4 vibration gained a lesser enhancement. The discussion, including the factors of roughness, crystalline disorder and influence by Ga ions, attempts to explain the increments of Raman intensity. (C) 2017 Elsevier B.V. All rights reserved.
收录类别:CPCI-S;SCIE
资源类型:会议论文
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