标题:Magnetoresistance and electron-hole exchange interaction in (Co1-xInx)2O3-vconcentrated ferromagnetic semiconductors
作者:Xu, T.S. ;Qiao, R.M. ;Tian, Y.F. ;Yan, S.S. ;Zhang, K. ;Cao, Y.L. ;Kang, S.S. ;Chen, Y.X. ;Liu, G.L. ;Mei, L.M.
作者机构:[Xu, T.S. ;Qiao, R.M. ;Tian, Y.F. ;Yan, S.S. ;Zhang, K. ;Cao, Y.L. ;Kang, S.S. ;Chen, Y.X. ;Liu, G.L. ;Mei, L.M. ] School of Physics, National Key Lab 更多
通讯作者:Yan, SS
来源:Applied Physics Letters
出版年:2013
卷:103
期:20
DOI:10.1063/1.4831689
摘要:Systematic studies of electrical transport properties of (Co1-xInx)2O3-vconcentrated ferromagnetic semiconductors were performed. Quantitative analysis demonstrated that spin dependent variable range hopping dominated the low temperature transport behavior. Moreover, it was found that ferromagnetic or antiferromagnetic coupling of electron-hole pair generated during the variable range hopping process is responsible for the negative or positive magnetoresistance, respectively. Our results not only illustrate the connection between magnetoresistance and electron-hole exchange interaction but also provide a unique method to detect the exchange interaction of electron-hole pair. © 2013 AIP Publishing LLC.
收录类别:EI
资源类型:期刊论文
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