标题:Radiation hardness of Kr+ ion implanted BaWO4 at room temperature
作者:Wang, Liang-Ling; Schmidt, Emanuel; Cui, Xiao-Jun; Wesch, Werner; Wendler, Elke
通讯作者:Wang, LL;Wendler, E
作者机构:[Wang, Liang-Ling; Cui, Xiao-Jun] Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China.; [Schmidt, Emanuel; Wesch, Werner; Wendle 更多
会议名称:19th International Conference on Radiation Effects in Insulators (REI)
会议日期:JUL 02-07, 2017
来源:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版年:2018
卷:435
页码:203-208
DOI:10.1016/j.nimb.2018.03.022
关键词:Radiation hardness; Ion implantation; BaWO4 crystal; Damage recovery
摘要:Single crystalline <100> oriented BaWO4 was implanted at room temperature with 370 keV Kr ions and ion fluences ranging from 1 x 10(12) to 4 x 10(16) ions/cm(2). The damage built-up during implantation was investigated by quasi in situ Rutherford backscattering spectrometry in channelling configuration (RBS/C) using a two-beam chamber. Up to the highest ion fluence applied no amorphization is observed indicating that BaWO4 has a high resistance to amorphization by ion irradiation. The shape of the RBS/C spectra indicates the existence of extended defects. Damage formation in the bulk proceeds in two steps, which can be attributed to formation and recombination of point defects and formation and growth of defect clusters including extended defects. Additionally a significant damage accumulation at the surface is observed. Some damage recovery occurs after annealing up to 600 degrees C. Although after annealing at 700 degrees C the amount of damage drastically decreased, complete damage recovery could not be obtained.
收录类别:CPCI-S;SCOPUS;SCIE
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044275587&doi=10.1016%2fj.nimb.2018.03.022&partnerID=40&md5=4f00aaf9ee777a333053138a032667c1
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