标题:2H-SiC dendritic nanocrystals in situ formation from amorphous silicon carbide under electron beam irradiation
作者:Li, XX; Hu, XB; Jiang, SZ; Dong, J; Xu, XG; Jiang, MH
通讯作者:Li, X.
作者机构:[Li, X] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Hu, X] State Key Laboratory of Crystal Materials, Shando 更多
会议名称:3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议日期:OCT 16-19, 2005
来源:稀土学报(英文版)
出版年:2006
卷:24
期:SUPPL.
页码:54-55
DOI:10.1016/S1002-0721(06)60065-3
关键词:electron beam irradiation;2H-SiC dendritic nanocrystal;amorphous silicon carbide
摘要:Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.
收录类别:CPCI-S;EI;SCOPUS;SCIE
WOS核心被引频次:1
Scopus被引频次:1
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745671887&doi=10.1016%2fS1002-0721%2806%2960065-3&partnerID=40&md5=b6c619e4a45673485966ee0a50f959a2
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