标题：Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor
作者：邓江峡;颜世申;梅良模;刘建平;B. Altuncevahir;V.Chakka;王勇;张泽;孙向成;J. Lian;K. Sun
作者机构：[邓江峡;颜世申;梅良模]School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100.;[刘建平;B. Altuncevahir;V 更多
通讯作者地址：[Deng, JX]Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
摘要：Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110 K to 300 K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.