作者机构：[邓江峡;颜世申;梅良模]School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100.;[刘建平;B. Altuncevahir;V 更多[邓江峡;颜世申;梅良模]School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100.;[刘建平;B. Altuncevahir;V.Chakka]Department of Physics, the University of Texas at Arlington, Box 19059, Arlington, Texas 76019, USA.;[王勇;张泽]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100022.;[孙向成;J. Lian;K. Sun]Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA. 收起
通讯作者：Deng, JX(jiangxiadeng@mail.sdu.edu.cn)
通讯作者地址：[Deng, JX]Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
来源：中国物理快报：英文版
出版年：2009
卷：26
期：2
页码：251-254
关键词：反铁磁耦合;磁性半导体;非均匀;快速退火;组成部分;半导体薄膜;均匀性控制;磁学性质;
摘要：Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110 K to 300 K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.
