标题:Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor
作者:邓江峡[1];颜世申[1];梅良模[1];刘建平[2];B. Altuncevahir[2];V.Chakka[2];王勇[3];张泽[3];孙向成[4];J. Lian[4];K. Sun[4]
作者机构:[邓江峡;颜世申;梅良模]School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100.;[刘建平;B. Altuncevahir;V 更多
通讯作者:Deng, JX(jiangxiadeng@mail.sdu.edu.cn)
通讯作者地址:[Deng, JX]Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
来源:中国物理快报:英文版
出版年:2009
卷:26
期:2
页码:251-254
关键词:反铁磁耦合;磁性半导体;非均匀;快速退火;组成部分;半导体薄膜;均匀性控制;磁学性质;
摘要:Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110 K to 300 K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.
收录类别:CSCD;SCOPUS;SCIE
WOS核心被引频次:2
Scopus被引频次:2
资源类型:期刊论文
原文链接:http://lib.cqvip.com/qk/84212X/200902/29553097.html
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