标题:Ion implantation, annealing diffusion and photoluminescence of Er in KTiOAsO4crystals
作者:Wang, Liang-Ling ;Cui, Xiao-Jun
作者机构:[Wang, Liang-Ling ] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, Shandong, China;[Cui 更多
通讯作者:Wang, LL
来源:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
出版年:2013
卷:307
页码:442-445
DOI:10.1016/j.nimb.2012.11.067
摘要:The KTiOAsO4crystals have been implanted with 500 keV Er ions at a fluence of 3.0 × 1015ions/cm2with the aim of optically doping the material in the near surface region. By combing the Stopping and Range of Ions in Matter results and X-ray diffraction results, we may conclude that the surface of the KTiOAsO4crystal suffered serious damage after Er+ion implantation. The depth distribution and annealing diffusion behavior of Er atoms were determined using the Rutherford backscattering technique. Photoluminescence emission at room temperature with a wavelength of 1540 nm was observed in the annealed sample. © 2013 Elsevier B.V. All rights reserved.
收录类别:EI
资源类型:期刊论文
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