标题：Ion implantation, annealing diffusion and photoluminescence of Er in KTiOAsO4crystals
作者：Wang, Liang-Ling ;Cui, Xiao-Jun
作者机构：[Wang, Liang-Ling ] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, Shandong, China;[Cui 更多
来源：Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
摘要：The KTiOAsO4crystals have been implanted with 500 keV Er ions at a fluence of 3.0 × 1015ions/cm2with the aim of optically doping the material in the near surface region. By combing the Stopping and Range of Ions in Matter results and X-ray diffraction results, we may conclude that the surface of the KTiOAsO4crystal suffered serious damage after Er+ion implantation. The depth distribution and annealing diffusion behavior of Er atoms were determined using the Rutherford backscattering technique. Photoluminescence emission at room temperature with a wavelength of 1540 nm was observed in the annealed sample. © 2013 Elsevier B.V. All rights reserved.