标题:High-Voltage -Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
作者:Gao, Yangyang; Li, Ang; Feng, Qian; Hu, Zhuangzhuang; Feng, Zhaoqing; Zhang, Ke; Lu, Xiaoli; Zhang, Chunfu; Zhou, Hong; Mu, Wenxiang 更多
作者机构:[Gao, Yangyang; Li, Ang; Feng, Qian; Hu, Zhuangzhuang; Feng, Zhaoqing; Zhang, Ke; Lu, Xiaoli; Zhang, Chunfu; Zhou, Hong; Zhang, Jincheng; Hao, Yue] Xi 更多
通讯作者:Feng, Q;Zhang, JC
通讯作者地址:[Feng, Q; Zhang, JC]Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Bandgap Semicond Te, Xian 710071, Shaanxi, Peoples R China.
来源:NANOSCALE RESEARCH LETTERS
出版年:2019
卷:14
DOI:10.1186/s11671-018-2849-y
关键词:-Ga2O3 Schottky diode; Argon implantation; Edge termination
摘要:The edge-terminated Au/Ni/-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50keV and dose of 5x10(14)cm(-2) and 1x10(16)cm(-2), the reverse breakdown voltage increases from 209 to 252 and 451V (the maximum up to 550V) and the Baliga figure-of-merit (V-BR(2)/R-on) also increases from 25.7 to 30.2 and 61.6MWcm(-2), about 17.5% and 140% enhancement, respectively. According to the 2D simulation, the electric fields at the junction corner are smoothed out after argon implantation and the position of the maximum breakdown electric filed, 5.05MV/cm, changes from the anode corner at the interface to the overlap corner just under the implantation region. The temperature dependence of the forward characteristics was also investigated.
收录类别:SCIE
WOS核心被引频次:1
资源类型:期刊论文
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