标题：Preparation and characterization of ternary Al-In-O films on Y-stabilized ZrO2substrates
作者：Feng, Xianjin ;Li, Zhao ;Zhao, Cansong ;Luo, Yi ;Ma, Jin
作者机构：[Feng, Xianjin ;Li, Zhao ;Zhao, Cansong ;Luo, Yi ;Ma, Jin ] School of Physics, Shandong University, Jinan; 250100, China
摘要：The ternary Al-In-O (Al2xIn2-2xO3) films with different Al contents x[Al/(Al+In) atomic ratio] were prepared on the Y-stabilized ZrO2(100) substrates by metal organic chemical vapor deposition (MOCVD) at 600 °C. The structural, optical and electrical properties of the films as a function of Al content (x=0.1-0.9) were investigated. With the increase of x from 0.1 to 0.9, a phase transition from the bixbyite In2O3structure with a single orientation along (100) to the amorphous structure was observed. The average transmittances of the Al2xIn2-2xO3films in the visible range were all over 76% and the optical band gap of the films was varied from 3.68 to 4.77 eV. The film with Al content of x=0.2 had the lowest resistivity of 7.82 × 10-3Ω cm, a carrier concentration of 9.81 × 1019cm-3and a Hall mobility of 8.17 cm2v-1s-1.
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