标题：Epitaxial Growth by Chemical Solution Deposition of (110) NdNiO3-delta Films with a Sharp Metal - Insulator Transition Annealed under Ambient Oxygen
作者：Zhu, Xuebin; Tang, Xianwu; Wang, Bosen; Fu, Yankun; Dai, Jianming; Song, Wenhai; Yang, Zhaorong; Zhu, Xiaoguang; Chen, Li; Sun, Yupi 更多
作者机构：[Zhu, Xuebin; Tang, Xianwu; Wang, Bosen; Dai, Jianming; Song, Wenhai; Yang, Zhaorong; Zhu, Xiaoguang; Chen, Li; Sun, Yuping] Chinese Acad Sci, Inst So 更多
来源：CRYSTAL GROWTH & DESIGN
摘要：Epitaxial-stabilized (110) NdNiO3-delta films were first realized successfully by chemical solution deposition under ambient oxygen annealing. Cross-section transmission electronic microscopy observation demonstrates the interlace is sharp and coherent due to epitaxial stabilization. The resistance change across the metal insulator transition. the transition sharpness, as well as the metallic state at 300 K are about 500.0.14 - In Omega/K ln K. and 0.031/K-2. respectively, which are comparable to the values for the films formed by vacuum-based methods, indicating the high-quality of the derived films. The successful achievement of (110) NdNiO3-delta films with a sharp metal - insulator transition will provides tin alternative route For preparation of high-quality perovskite nickelate films using ambient oxygen annealing.