标题:Effect of hydrogenation on transport and magnetic properties in homogeneous amorphous MnxGe1-x:H films
作者:Qin, Yu-Feng ;Yan, Shi-Shen ;Xiao, Shu-Qin ;Li, Qiang ;Dai, Zheng-Kun ;Shen, Ting-Ting ;Kang, Shi-Shou ;Dai, You-Yong ;Liu, Guo-Lei ;Chen, Yan-Xue ;Me 更多
作者机构:[Qin, Yu-Feng ;Yan, Shi-Shen ;Xiao, Shu-Qin ;Li, Qiang ;Dai, Zheng-Kun ;Shen, Ting-Ting ;Kang, Shi-Shou ;Dai, You-Yong ;Liu, Guo-Lei ;Chen, Yan-Xue ;M 更多
通讯作者:Yan, SS
来源:Journal of Applied Physics
出版年:2011
卷:109
期:8
DOI:10.1063/1.3573781
摘要:Homogeneous amorphous MnxGe1-x:H films were synthesized under thermal nonequilibrium condition by magnetron co-sputtering technology with hydrogen in Ar atmosphere. Compared to the MnxGe1-xfilms without hydrogen, the MnxGe1-x:H films with hydrogen show higher concentration of hole carriers, larger conductivity, and higher saturation magnetization. Moreover, it was found that the anomalous Hall resistivity is proportional to the perpendicular magnetization. These electrical and magnetic properties indicate that the ferromagnetism of the MnxGe1-x:H films is intrinsic ferromagnetism mediated by the spin-polarized hole carriers. © 2011 American Institute of Physics.
收录类别:EI
资源类型:期刊论文
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