标题:Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy
作者:Cai, Wensi; Wilson, Joshua; Zhang, Jiawei; Park, Seonghyun; Majewski, Leszek; Song, Aimin
作者机构:[Cai, Wensi; Zhang, Jiawei; Park, Seonghyun; Song, Aimin] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England.; [Song, Aimin 更多
通讯作者:Song, Aimin;Song, AM
通讯作者地址:[Song, AM]Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England.
来源:IEEE ELECTRON DEVICE LETTERS
出版年:2019
卷:40
期:1
页码:36-39
DOI:10.1109/LED.2018.2882464
关键词:Indium-gallium-zinc-oxide; thin-film transistors (TFTs); plastic; substrate; 1 V operation
摘要:Indium-gallium-zinc-oxide thin-film transistors gated with solution-processed, ultra-thin AlxOy have been fabricated on a plastic substrate. The effects of bending on the gate dielectric in terms of leakage current density and capacitance density have been studied. The devices show a low operating voltage of less than 1 V, a high current on/off ratio >10(5), and a low subthreshold swing <90 mV/decade. The devices maintain their high performance even when flexed to a curvature radius of 11 mm. As a result, such devices possess a great potential for low-power, flexible electronics.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85057150186&doi=10.1109%2fLED.2018.2882464&partnerID=40&md5=b17e8995a5e7d40943987bd97be139d0
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