标题:Fabrication of large-scale spherical-cap structure and the application on n-GaN based light-emitting diodes
作者:Yin, Hong-Xing ;Zhu, Chuan-Rui ;Shen, Yan ;Yang, Hai-Fang ;Liu, Zhe ;Gu, Chang-Zhi ;Liu, Bao-Li ;Xu, Xian-Gang
作者机构:[Yin, Hong-Xing ;Zhu, Chuan-Rui ;Yang, Hai-Fang ;Liu, Zhe ;Gu, Chang-Zhi ;Liu, Bao-Li ] Beijing National Laboratory for Condensed Matter Physics, Inst 更多
来源:Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
出版年:2014
卷:32
期:3
DOI:10.1116/1.4874611
摘要:An under exposure method based on Fresnel diffraction effect in a conventional optical lithography system is used to fabricate large-scale, uniform spherical-cap structures. This method provides an effective roughening technology on the top surface of light-emitting diodes (LEDs) to improve the light extraction efficiency of LEDs. LEDs with high duty cycle spherical-cap structures showed enhanced light output power by 130%-160% compared with the LED with a flat surface. This simple and easy shape control method has potential applications in other optical devices such as organic LEDs, inorganic solar cells, and laser diodes. © 2014 American Vacuum Society.
收录类别:EI
资源类型:期刊论文
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