标题:Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions
作者:Zhang, Kun; Li, Huan-huan; Gruenberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; 更多
作者机构:[Zhang, Kun; Li, Huan-huan; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, L 更多
通讯作者:Tian, YF
通讯作者地址:[Tian, YF]Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:SCIENTIFIC REPORTS
出版年:2015
卷:5
DOI:10.1038/srep14249
摘要:Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.
收录类别:SCOPUS;SCIE
WOS核心被引频次:8
Scopus被引频次:9
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84942162651&doi=10.1038%2fsrep14249&partnerID=40&md5=c3283f772d5139f0cbbd9f44812731bb
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