标题：Annealing characters of KTP crystal formed with He+-ions at high dose and low energy
作者：Yin J.-J.; Lu F.; Qin Z.-H.; Ming X.-B.; Ma Y.-J.; Jia C.-L.
作者机构：[Yin, J.-J] Shandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University 更多
通讯作者地址：[Lu, F] Shandong Provincial Key Laboratory of Laser Technology and Application, School of Information Science and Engineering, Shandong University, Ji 更多
来源：2011 Symposium on Photonics and Optoelectronics, SOPO 2011
关键词：Annealing characters; Implantation; KTP crystal; The prism coupling method
摘要：A dose of 8×1016 ions/cm2 He+ ions has been implanted into a z-cut KTP crystal with energy of 150 KeV at room temperature. The refractive index profile has been measured by the Model 2010 Prism Coupler at room temperature and after annealed at temperature of 200°C, 300°C and 400°C. The surface effective refractive index also has been obtained. The results show that the surface effective refractive index increases with annealing temperature, indicating a process of lattice structure recovery. After annealing at 400°C for 3.5 hours, the surface effective refractive index nx, ny is nearly to, while nz is still much less than the refractive index of substrate KTP crystal. © 2011 IEEE.