标题：The effect of sputtering power on the properties of Zr-Ga Co-doped ZnO films by DC magnetron sputtering
作者：Wu, Xiaoli ;Wang, Hui ;Yuan, Yuzhen
作者机构：[Wu, Xiaoli ;Wang, Hui ] School of materials Science and Engineering, Shandong University of Technology, Zibo 255049, China;[Yuan, Yuzhen ] School of 更多
会议名称：2013 2nd International Conference on Sport Material, Modelling and Simulation, ICSMMS 2013
会议日期：January 20, 2013 - January 21, 2013
来源：Advanced Materials Research
摘要：Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω.cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV). © (2013) Trans Tech Publications, Switzerland.