标题:Damage recovery and dopant migration of Eu+ ion implanted KTiOAsO4 crystals
作者:Wang, Liang-Ling; Roeder, Robert; Cui, Xiao-Jun; Wesch, Werner; Wendler, Elke
通讯作者:Wang, LL;Wendler, E
作者机构:[Wang, Liang-Ling; Cui, Xiao-Jun] Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China.; [Roeder, Robert; Wesch, Werner; Wendler, 更多
会议名称:19th International Conference on Radiation Effects in Insulators (REI)
会议日期:JUL 02-07, 2017
来源:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版年:2018
卷:435
页码:209-213
DOI:10.1016/j.nimb.2018.01.008
关键词:Arsenic evaporation; Europium migration; Rutherford backscattering spectrometry; Titanium diffusion
摘要:Damage formation and annealing of Eu implanted KTiOAsO4 crystals is investigated. Ion implantation was done with 400 keV Eu2+ ions and an ion fluence of 5 x 10(15) ions/cm(2) at room temperature. The damage of as implanted and annealed samples was analysed by Rutherford backscattering spectrometry in channelling configuration using 2.1 MeV He+ ions. After implantation, a thick RBS-amorphous layer is obtained. The damage in the Eu2+ implanted KTiOAsO4 layer decreases significantly after annealing at 700 degrees C for 30 min in Ar atmosphere. Interestingly, the Eu peak firstly migrated to the surface after annealing at 600 degrees C for 30 min, and then appeared narrower after annealing at 700 degrees C for 30 min. Furthermore, arsenic loss by evaporation and titanium enrichment at the surface are observed during the annealing process.
收录类别:CPCI-S;SCOPUS;SCIE
最新影响因子:1.389
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85040720935&doi=10.1016%2fj.nimb.2018.01.008&partnerID=40&md5=0b6917ec9a894e35886843a948dbc16a
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