标题:Etching study of SiC wafers
作者:Li, J; Wang, YM; Chen, XF; Xu, XG; Hu, XB; Jiang, WH
通讯作者:Li, J.
作者机构:[Li, J] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Wang, Y] State Key Laboratory of Crystal Materials, Shan 更多
会议名称:3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议日期:OCT 16-19, 2005
来源:稀土学报(英文版)
出版年:2006
卷:24
期:SUPPL.
页码:29-32
DOI:10.1016/S1002-0721(06)60060-4
关键词:defects;etching;SiC
摘要:SiC substrates grown by the sublimation method still have high densities of structural defects such as dislocations, micropipes, low-angle grain boundaries, macrodefects and polytypes. Wet etching was effectively used to study the defects of SiC. Etch pit shapes of defects and their origins were discussed. Most of the defects originate in the initial growth stage. Thus to optimize the early growth conditions especially the temperature distribution is a crucial problem.
收录类别:CPCI-S;EI;SCOPUS;SCIE
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745529459&doi=10.1016%2fS1002-0721%2806%2960060-4&partnerID=40&md5=22a1d1601f78d33cc9aeaa297b248a39
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