标题：Ternary Al2xIn2-2xO3films with tunable optical band gap prepared on YSZ (1 0 0) substrates by metal organic chemical vapor deposition
作者：Feng, Xianjin ;Zhao, Cansong ;Li, Zhao ;Luo, Yi ;Ma, Jin
作者机构：[Feng, Xianjin ;Zhao, Cansong ;Li, Zhao ;Luo, Yi ;Ma, Jin ] School of Physics, Shandong University, Jinan; 250100, China
来源：Journal of Alloys and Compounds
摘要：The ternary Al2xIn2-2xO3films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO2(YSZ) (1 0 0) substrates by the metal organic chemical vapor deposition (MOCVD) method at 700 °C. The influence of various Al contents (x = 0.1-0.9) on the structural, electrical and optical properties of the films have been investigated. Structural analyses revealed a phase transition from the bixbyite In2O3structure with a single orientation along (1 0 0) to the amorphous structure as the Al content increases from 10% to 90%. The lowest resistivity of 4.84 × 10-3Ω cm with a carrier concentration of 1.1 × 1020cm-3and a Hall mobility of 11.74 cm2V-1s-1were obtained for the sample with x = 0.2. The average transmittances for the Al2xIn2-2xO3films in the visible range were all over 77% and the optical band gap of the films could be modulated from 3.67 to 4.73 eV.
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