标题:Atomistic study of transport characteristics in Sub-1nm ultra-narrow molybdenum disulfide (MoS2) nanoribbon field effect transistors
作者:Wang F.; Ma X.; Wu J.; Chen J.; Jiang X.
作者机构:[Wang, F] School of Information Science and Engineering, Shandong University, Qingdao, China, Institute of Semiconductors, Chinese Academy of Sciences 更多
来源:2019 Silicon Nanoelectronics Workshop, SNW 2019
出版年:2019
DOI:10.23919/SNW.2019.8782953
摘要:In this work, nanoribbon field-effect-transistors (FETs) with an ultra-narrow monolayer MoS2 channel are investigated to understand the transverse scaling limitations of MoS2 FETs. It is observed that the bandgap of monolayer nanoribbon MoS2 can be largely affected by the passivation atoms, wherein OH passivation is more effective than H passivation. Then, impacts of passivation atoms on transport characteristics in MoS2 FETs with ultra-narrow MoS2 channel are calculated. Though higher Ion and lower Ioff can be obtained even in narrow MoS2 FETs with O/H passivation, Ioff is hard to be suppressed due to the contribution of edge states. Our results indicate that edge states engineering could be one key point to integrate MoS2 devices into CMOS technology. © 2019 JSAP.
收录类别:SCOPUS
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85070859223&doi=10.23919%2fSNW.2019.8782953&partnerID=40&md5=9434abd4a868fbfff7a90be847dc3eac
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