标题：Annealing effect and photoluminescence properties in Tm+- implanted ZnO crystal
作者：Ming, Xianbing ;Lu, Fei ;Ji, Ziwu ;Chen, Ming ;Zhao, Jinhua ;Yin, Jiaojian ;Ma, Yujie
作者机构：[Ming, Xianbing ;Lu, Fei ;Yin, Jiaojian ;Ma, Yujie ] School of Information Science and Engineering, Shandong University, Jinan 250100, China;[Zhao, Ji 更多
来源：Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
摘要：ZnO crystals were implanted by Tm+ions at 500 keV with different doses at room temperature. The lattice damage tends to saturate at dose higher than 3 × 1015ions cm-2, indicating a strong irradiation resistance of ZnO. Post-implant annealing at temperature from 800 to 1050 °C is performed to activate Tm ion optically. Annealing higher than 950 °C resulted in out-diffusion of Tm ions. Photoluminescence was measured at room temperature with UV and green excitation, luminescence of transition3H4→3H6from Tm3+and concentration quenching behavior is observed in samples suffering 800 °C annealing for 30 min. Typical emission bands from ZnO crystal are detected in both virgin and the implanted samples. The results show that the implanted Tm+seems serving as deep traps to contribute to the red band emission. © 2011 Elsevier B.V. All rights reserved.