标题：Diode-pumped passively Q-switched and mode-locked Nd:Lu _(0.15)Y_(0.85)VO_4 laser with a GaAs saturable absorber
作者：Han, C.;Zhao, S.;Li, G.;Li, D.;Yang, K.;Zhang, G.;Cheng, K.;Zhao, B.
作者机构：[Han, C] School of Information Science and Engineering, Shandong University, Jinan 250100, China;[ Zhao, S] School of Information Science and Engineer 更多
通讯作者地址：[Han, C]Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China.
来源：Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application
摘要：By using a-cut Nd:Lu_(0.15)Y_(0.85)VO_4 mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_(0.15)Y_(0.85)VO_4 is a promising mixed crystal for QML laser.