标题：Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05)2O3 films
作者：Xing, Pengfei ;Chen, Yanxue ;Sun, Shaohua
作者机构：[Xing, Pengfei ;Sun, Shaohua ] Department of Applied Physics, Faculty of Science, Tianjin University, Tianjin 300072, China;[Chen, Yanxue ] School of 更多
来源：Journal of Semiconductors
摘要：Room-temperature ferromagnetism was observed in (In0.95-xSn xFe0.05)2O3 (x = 0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism. © 2013 Chinese Institute of Electronics.