标题:Effect of Sn-doping on the structural, electrical and magnetic properties of (In0.95-xSnxFe0.05)2O3 films
作者:Xing, Pengfei ;Chen, Yanxue ;Sun, Shaohua
作者机构:[Xing, Pengfei ;Sun, Shaohua ] Department of Applied Physics, Faculty of Science, Tianjin University, Tianjin 300072, China;[Chen, Yanxue ] School of 更多
通讯作者:Xing, P
来源:Journal of Semiconductors
出版年:2013
卷:34
期:2
DOI:10.1088/1674-4926/34/2/023002
摘要:Room-temperature ferromagnetism was observed in (In0.95-xSn xFe0.05)2O3 (x = 0-0.09) films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism. © 2013 Chinese Institute of Electronics.
收录类别:EI
资源类型:期刊论文
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