标题:The effect of B-site (W/Nb) co-substituting on the electrical properties of sodium bismuth titanate high temperature piezoceramics
作者:Abah, Roza; Gai, Zhi-Gang; Zhan, Shi-Qing; Zhao, Ming-Lei
作者机构:[Abah, Roza; Gai, Zhi-Gang; Zhan, Shi-Qing; Zhao, Ming-Lei] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
通讯作者:Gai, ZhiGang
通讯作者地址:[Gai, ZG]Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:JOURNAL OF ALLOYS AND COMPOUNDS
出版年:2016
卷:664
页码:1-4
DOI:10.1016/j.jallcom.2015.12.218
关键词:B-site co-substituted; Bismuth layer-structured ferroelectrics; High; temperature application
摘要:The effect of (W/Nb) co-doping at the B-site on the properties of Na0.5Bi4.5Ti4O15-based ceramics was systematically investigated in first. The distortion of lattice caused by B-site substitution improved piezoelectric activity greatly. With the introduction of W/Nb doping, these activation energy parameters indicate the existence of the p-type electrical conductivity and the oxygen vacancies motion. The oxygen vacancy migration may be suppressed because of the oxygen ion mobility being affected by the W/Nb doping, but at last the electron carriers may play an important role with the increase of electron concentration and lattice distortion. The piezoelectric coefficient d(33) of the (W/Nb) co-substituted samples is 28 pC/N, more than 2.5 times as much as the d(33) value of the pure Na0.5Bi4.5Ti4O15 ceramics (similar to 11 pC/N). Decreasing with modification, the dielectric loss of x = 0.020 sample is only 0.33%. Meanwhile, the thickness coupling factor k(t), the planar coupling factor k(p) and the mechanical quality factor Q are 28.0%, 7.0% and 2471, respectively. Together with its high T-c (similar to 645 degrees C), the dielectric and piezoelectric properties of doped sample exhibiting a very stable temperature behavior make the (W/Nb) co-substituted Na0.5Bi4.5Ti4O15-based ceramics a promising candidate for high temperature applications. (c) 2015 Elsevier B.V. All rights reserved.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:4
Scopus被引频次:4
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84953260957&doi=10.1016%2fj.jallcom.2015.12.218&partnerID=40&md5=9f02c351d046f05dff7c4b0f2ad8fc2c
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