标题:Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence
作者:Fan, Ranran ;Lu, Fei ;Li, Kaikai ;Liu, Kaijing
作者机构:[Fan, Ranran ;Lu, Fei ;Li, Kaikai ;Liu, Kaijing ] School of Information Science and Engineering, Shandong University, Jinan; 250100, China
通讯作者:Lu, Fei
来源:Applied Surface Science
出版年:2018
卷:442
页码:525-528
DOI:10.1016/j.apsusc.2018.02.192
摘要:This paper investigated the controllable growth of Ge nanocrystal (nc-Ge) in (Ge, Er) co-doped ZnO film, and the relationship between the size of nc-Ge and the enhancement of Er3+related 1.54 μm photoluminescence (PL). It was found that nc-Ge with size of ∼5 nm was formed by annealing treatment at 600 °C. The intensity of 1.54 μm was significantly enhanced due to the existence of nc-Ge and showed an obvious dependence on nanocrystal size. The size of nc-Ge increased with the increase of the annealing temperature, and the nanocrystal with size of ∼5 nm made the most obvious contribution to PL enhancement. Prolonging annealing time could improve the crystalline structure of ZnO matrix but had no effect on PL intensity. The experimental results showed that the PL enhancement was mainly achieved by transferring the energy to Er through the resonance absorption of nc-Ge.
© 2018 Elsevier B.V.
收录类别:EI
资源类型:期刊论文
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