标题:Effect of gate–source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
作者:Cui, Peng ;Lin, Zhaojun ;Fu, Chen ;Liu, Yan ;Lv, Yuanjie
作者机构:[Cui, Peng ;Lin, Zhaojun ;Fu, Chen ;Liu, Yan ] School of Microelectronics, Shandong University, Jinan; 250100, China;[Lv, Yuanjie ] National Key Labor 更多
通讯作者:Lin, Zhaojun
来源:Applied Physics A: Materials Science and Processing
出版年:2018
卷:124
期:5
DOI:10.1007/s00339-018-1777-0
摘要:In this paper, the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate–source spacings were fabricated. Using the measured parasitic source access resistance and the scattering theoretical calculation, it is verified that the gate–source spacing can affect the parasitic source access resistance by altering PCF scattering. This paves a possible way to utilize this effect to improve the performance of AlGaN/GaN HFETs by choosing the optimizing gate-source spacing.
© 2018, Springer-Verlag GmbH Germany, part of Springer Nature.
收录类别:EI
资源类型:期刊论文
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