标题：Crystal Structure and Resistance-temperature characteristic of the Boron-doped Diamonds Synthesized from Fe-Ni-C-B System
作者：Gong, Jianhong; Lin, Shuxia; Gao, Jun
作者机构：[Gong, Jianhong; Lin, Shuxia; Gao, Jun] Shandong Univ Weihai, Sch Mech Elect & Informat Engn, Weihai 264209, Shandong, Peoples R China.
会议名称：International Conference on Mechanics, Solid State and Engineering Materials (ICMSSEM)
会议日期：SEP 01-02, 2011
来源：MECHANICS, SOLID STATE AND ENGINEERING MATERIALS
关键词：diamond; boron; resistance; ionization energy
摘要：In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.