标题:Crystal Structure and Resistance-temperature characteristic of the Boron-doped Diamonds Synthesized from Fe-Ni-C-B System
作者:Gong, Jianhong; Lin, Shuxia; Gao, Jun
通讯作者:Gong, J
作者机构:[Gong, Jianhong; Lin, Shuxia; Gao, Jun] Shandong Univ Weihai, Sch Mech Elect & Informat Engn, Weihai 264209, Shandong, Peoples R China.
会议名称:International Conference on Mechanics, Solid State and Engineering Materials (ICMSSEM)
会议日期:SEP 01-02, 2011
来源:MECHANICS, SOLID STATE AND ENGINEERING MATERIALS
出版年:2011
卷:279
页码:111-114
DOI:10.4028/www.scientific.net/AMR.279.111
关键词:diamond; boron; resistance; ionization energy
摘要:In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.
收录类别:CPCI-S;EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79960435867&doi=10.4028%2fwww.scientific.net%2fAMR.279.111&partnerID=40&md5=7bc74a3b09eb08b56aac91a6775c1779
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