标题：Passively Q-switched Nd:LuAG laser using few-layered MoS2as saturable absorber
作者：Wang, C. ;Zhao, S.Z. ;Li, T. ;Yang, K.J. ;Luan, C. ;Xu, X.D. ;Xu, J.
作者机构：[Wang, C. ;Zhao, S.Z. ;Li, T. ;Yang, K.J. ;Luan, C. ] School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Techn 更多[Wang, C. ;Zhao, S.Z. ;Li, T. ;Yang, K.J. ;Luan, C. ] School of Information Science and Engineering, Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan; 250100, China;[Xu, X.D. ] Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou; 221116, China;[Yang, K.J. ] State Key Laboratory of Crystal Material, Shandong University, Jinan; 250100, China;[Xu, J. ] School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai; 200092, China 收起
