标题:Effects of oxygen vacancy on the electrical and magnetic properties of anatase Fe0.05Ti0.95O2-δfilms
作者:Li, Q.H. ;Wei, L. ;Xie, Y.R. ;Jiang, F. ;Zhou, T. ;Hu, G.X. ;Jiao, J. ;Chen, Y.X. ;Liu, G.L. ;Yan, S.S. ;Mei, L.M.
作者机构:[Li, Q.H. ;Xie, Y.R. ;Jiang, F. ;Zhou, T. ;Hu, G.X. ;Chen, Y.X. ;Liu, G.L. ;Yan, S.S. ;Mei, L.M. ] School of Physics and State Key Laboratory of Cryst 更多
通讯作者:Chen, YX
来源:Journal of Alloys and Compounds
出版年:2013
卷:574
页码:67-70
DOI:10.1016/j.jallcom.2013.04.052
摘要:Epitaxial anatase Fe0.05Ti0.95O2-δ(δ: oxygen vacancy) thin films were grown on LaAlO3substrates by pulsed laser deposition. Structural characterizations by X-ray diffraction confirmed the incorporation of substituting Fe atoms into anatase TiO2lattice, no impurity phases or clusters formation were detected. The influence of growth oxygen pressure on the crystal structure and properties of Fe0.05Ti0.95O2-δsemiconductor films has been investigated systematically. As the oxygen pressure decreases, more oxygen vacancies are generated in the thin film. At the same time, the optical band gap narrows down and the electrical properties improve correspondingly. Room temperature ferromagnetism was observed in all samples and saturation magnetization increased from 0.8 emu/cm3 to 8.3 emu/cm3with the increase of oxygen vacancy concentration. Strong correlation between ferromagnetism and oxygen vacancy density was established. This is explained by a modified bounded magnetic polaron model. © 2013 Elsevier B.V. All rights reserved.
收录类别:EI
资源类型:期刊论文
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