标题:Influence of the sputtering pressure on the properties of TAZO films prepared by DC magnetron sputtering
作者:Liu, Han-fa; Yuan, Chang-kun
通讯作者:Liu, HF
作者机构:[Liu, Han-fa; Yuan, Chang-kun] Shandong Univ Technol, Sch Sci, Zibo 255049, Peoples R China.
会议名称:International Conference on Optical, Electronic and Electrical Materials
会议日期:AUG 01-04, 2010
来源:OPTOELECTRONIC MATERIALS, PTS 1AND 2
出版年:2010
卷:663-665
页码:1045-1048
DOI:10.4028/www.scientific.net/MSF.663-665.1045
关键词:Ti-Al co-doped zinc oxide films; Transparent conducting films;; Sputtering pressure; Magnetron sputtering
摘要:Transparent conducting Ti-Al co-doped zinc oxide films (TGZO) with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by DC magnetron sputtering at room temperature. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The Ar sputtering pressure was varied from 1.5 to 13 Pa. The electrical resistivity decreases when the sputtering pressure increases from 1.5 to 7.5 Pa. The electrical resistivity increases when the sputtering pressure increases from 7.5 to 13 Pa. When the sputtering pressure is 7.5 Pa, it is obtained that the lowest resistivity is 2.18x10(-4)Omega.cm. In the visible region, all the deposited films show a high average transmittance of above 92 %.
收录类别:CPCI-S
资源类型:会议论文
TOP