标题:Effects of Sn doping on the morphology and properties of Fe-doped In2O3epitaxial films
作者:Zhou, Tie ;Wei, Lin ;Xie, Yanru ;Li, Qinghao ;Hu, Guoxiang ;Chen, Yanxue ;Yan, Shishen ;Liu, Guolei ;Mei, Liangmo ;Jiao, Jun
作者机构:[Zhou, Tie ;Xie, Yanru ;Li, Qinghao ;Hu, Guoxiang ;Chen, Yanxue ;Yan, Shishen ;Liu, Guolei ;Mei, Liangmo ] School of Physics and State Key Laboratory 更多
通讯作者:Chen, Y
来源:Nanoscale Research Letters
出版年:2012
卷:7
DOI:10.1186/1556-276X-7-661
摘要:(Sn, Fe)-codoped In2O3epitaxial films were deposited on (111)-oriented Y-stabilized ZrO2substrates by pulsed laser deposition with constant Fe concentration and different Sn concentrations. The influence of Sn concentration on the crystal structure and properties of Fe-doped In2O3ferromagnetic semiconductor films has been investigated systematically. Experimental results indicate that Sn doping can effectively reduce the surface roughness and suppresses breakup of the films into separated islands. At the same time, the optical band gap increases and the electrical properties improve correspondingly. However, although the carrier density increases dramatically with the Sn doping, no obvious change of the ferromagnetism is observed. This is explained by a modified bounded magnetic polaron model. © 2012 Zhou et al.
收录类别:EI
资源类型:期刊论文
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