标题:One-on-One and R-on-One Tests on KDP and DKDP Crystals with Different Orientations
作者:胡国行[1,2];赵元安[1];孙绍涛[3];李大伟[1];孙洵[3];邵建达[1];范正修[1]
作者机构:[胡国行;赵元安;李大伟;邵建达;范正修]Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine.;[胡 更多
通讯作者:Hu, GH(hgh0425@mail.ustc.edu.cn)
通讯作者地址:[Hu, GH]Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat Sci & Technol High Power Lasers, Shanghai 201800, Peoples R China.
来源:中国物理快报:英文版
出版年:2009
卷:26
期:8
页码:332-334
关键词:磷酸二氘钾;晶体;民主;取向;试验;通过测试;损伤阈值;激光诱导;
摘要:By testing a substantial number of tripler and z-cut KDP and DKDP crystals, we have observed that at 355 nm, the laser induced damage threshold in the R-on-one test is higher than that in the one-on-one test. It is proved that laser conditioning is an efficient way to improve the damage resistance. The efficiency of laser conditioning becomes increasingly good with smaller ramping fluence steps. We have also found that the damage resistance of the z-cut crystal is higher than the tripler cut, and the pinpoint number is definitely less in the z-cut crystal. The reason for these observations is discussed.
收录类别:CSCD;SCOPUS;SCIE
WOS核心被引频次:15
Scopus被引频次:21
资源类型:期刊论文
原文链接:http://lib.cqvip.com/qk/84212X/200908/31135679.html
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