标题：Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures
作者：Jiang, Ran ;Han, Zuyin ;Sun, Weideng ;Du, Xianghao ;Wu, Zhengran ;Jung, Hyung-Suk
作者机构：[Jiang, Ran ;Han, Zuyin ;Sun, Weideng ;Du, Xianghao ;Wu, Zhengran ] Physical School, Shandong University, 27# Shanda Southern Road, Jinan, Shandong; 2 更多
来源：Applied Physics Letters
摘要：Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors when the samples under different gate polarities. At a negative voltage, a transmission modulation depth up to ∼74% was present without depending on the photo illumination power, whereas, at a positive voltage, the modulation of Thz wave shows dependence on the illumination power, which is ascribed to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2layer. Considering the good compatibility of HfO2on Si-based semiconductor process, the ferroelectricity layer of Si:HfO2may open up an avenue for the tunable modulation of Thz wave.
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