标题:High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact
作者:Du, Lulu; Xin, Qian; Xu, Mingsheng; Liu, Yaxuan; Mu, Wenxiang; Yan, Shiqi; Wang, Xinyu; Xin, Gongming; Jia, Zhitai; Tao, Xu-Tang; 更多
作者机构:[Du, Lulu; Xin, Qian; Xu, Mingsheng; Liu, Yaxuan; Yan, Shiqi; Song, Aimin] Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China.; [Du, Lulu; 更多
通讯作者:Xin, Q;Xu, MS;Xin, Q;Xu, MS;Jia, ZT;Tao, XT;Xin, Qian
通讯作者地址:[Xin, Q; Xu, MS]Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China;[Xin, Q; Xu, MS]Shandong Univ, Sch Microelect, Jinan 250100, Peoples R Chi 更多
来源:IEEE ELECTRON DEVICE LETTERS
出版年:2019
卷:40
期:3
页码:451-454
DOI:10.1109/LED.2019.2893633
关键词:Ga2O3; Schottky barrier diodes (SBDs); tin oxide (SnOx)
摘要:A high-performance Schottky diode based on a 600-mu m-thick Cr-doped beta-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency-related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high-qualityGa(2)O(3) single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 x 1018 cm-3 and an electron mobility of similar to 90 cm(2)/Vs. The current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.19 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. The frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062702279&doi=10.1109%2fLED.2019.2893633&partnerID=40&md5=5077f655fe5c46d6325d3e7d1cdbf249
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