标题：Effect of Er local surrounding on photoluminescence of Si Er co-doped ZnO film
作者：Li, Kaikai; Lu, Fei; Fan, Ranran; Ma, Changdong; Xu, Bo
作者机构：[Li, Kaikai; Lu, Fei; Fan, Ranran; Xu, Bo] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China.; [Ma, Changdong] Shandon 更多
通讯作者地址：[Lu, F]Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China.
来源：JOURNAL OF LUMINESCENCE
关键词：ZnO; Er2O3; Er2SiO5; Photoluminescence
摘要：Er2O3:ZnO layers were deposited on SiO2/Si substrates by conventional magnetron sputtering under room temperature(RT), the Si doped Er: ZnO films were achieved by direct Si implantation with various Si doses (ranging from 4 * 10(15) to 2.5 * 10(16) cm(-2)) and post annealing at two different temperatures 950 and 1200 degrees C. Surface morphological and structure properties were measured by optical microscope, x-ray diffraction (XRD) and transmission electron microscope (TEM). The Er-Si-O compounds were obtained in Si doped Er: ZnO sample after annealed at 1200 degrees C. An increased photoluminescence (PL) intensity and widened profile are attributed to the change of local surrounding of Er caused by modification of ZnO lattice and the formation of Er-Si-O compounds.