标题:High power 808 nm laser diode with 62% wall-plug efficiency
作者:Li, Peixu ;Jiang, Kai ;Zhang, Xin ;Tang, Qingmin ;Xia, Wei ;Li, Shuqiang ;Ren, Zhongxiang ;Xu, Xiangang
作者机构:[Li, Peixu ;Jiang, Kai ;Zhang, Xin ;Tang, Qingmin ;Xia, Wei ;Li, Shuqiang ;Ren, Zhongxiang ;Xu, Xiangang ] Shandong Huaguang Optoelectronics Co. Ltd., 更多
通讯作者:Li, P
来源:Guangxue Xuebao/Acta Optica Sinica
出版年:2011
卷:31
期:SUPPL.1
DOI:10.3788/AOS201131.s100308
关键词:GaAsP/GaInP/AlGaInP; Low pressure metal organic chemical vapor deposition; Semiconductor laser; Wall-plug efficiency
摘要:Based on the analysis of energy loss in a laser diode, we optimize the structure of the laser diode and metal organic chemical vapor deposition (MOCVD) growth condition. By low pressure (LP) MOCVD, GaAsP/GaInP/AlGaInP strained quantum well large optical cavity structure is grown, and high power continuous wave (CW) 808 nm laser diode is fabricated. At 25°C under CW operation condition, an output power of 11.5 W is obtained at 10 A current, with the threshold current being 1.15 A. The wall-plug efficiency reaches 62%. With the operation current of 5.5 A at 40°C, less than 2% output power degenerates over 1000 h.
收录类别:EI;SCOPUS
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79960856466&doi=10.3788%2fAOS201131.s100308&partnerID=40&md5=3cba11403feb4b0cad6d32d23c428def
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