标题:Simulation Studies on Very Fast Transient Overvoltage
作者:He, Baina; Zhao, Yunwei; Huang, Guichun; Hu, Yuanchao; An, Yunzhu
通讯作者:He, BN
作者机构:[He, Baina; Huang, Guichun; Hu, Yuanchao; An, Yunzhu] Shandong Univ Technol, Coll Elect & Elect Engn, Zibo, Peoples R China.; [Zhao, Yunwei] Shandon 更多
会议名称:IEEE International Conference on High Voltage Engineering and Application (ICHVE)
会议日期:SEP 19-22, 2016
来源:2016 IEEE INTERNATIONAL CONFERENCE ON HIGH VOLTAGE ENGINEERING AND APPLICATION (ICHVE)
出版年:2016
关键词:Very Fast Transient Overvoltage; Rate of Rise; Residual Voltage
摘要:Very fast transient overvoltage (VFTO) not only influence the operating reliability of GIS, but also causes great threat to the insulation of the high-voltage equipment, especially to windings of the transformer. Taking a 550kV GIS substation as the object, VFTO characteristics, generation mechanism and influencing factors are studied in the paper. Based on the structure of GIS, the simulation model of GIS internal structure is established, and the fast transient overvoltage caused by GIS disconnector operation is simulated. The influences of the structure parameters on the fast transient overvoltage is analyzed, and the influence factors of VFTO are analyzed from the point of view of internal and external GIS.
收录类别:CPCI-S
资源类型:会议论文
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