标题:A study on W vacancy defect in mono-layer transition-metal dichalcogenide (TMD) TFETs through systematic ab initio calculations
作者:Wu, Jixuan ;Fan, Zhiqiang ;Chen, Jiezhi ;Jiang, Xiangwei
通讯作者:Chen, Jiezhi
作者机构:[Wu, Jixuan ;Chen, Jiezhi ] School ofinformation Science and Engineering, Shandong University, Jinan, China;[Wu, Jixuan ;Fan, Zhiqiang ;Jiang, Xiangwe 更多
会议名称:22nd Silicon Nanoelectronics Workshop, SNW 2017
会议日期:4 June 2017 through 5 June 2017
来源:2017 Silicon Nanoelectronics Workshop, SNW 2017
出版年:2017
卷:2017-January
页码:9-10
DOI:10.23919/SNW.2017.8242271
摘要:Aiming at performance enhancements and robust reliability design of mono-layer transition-metal dichalcogenide (TMD) tunneling FET(TFET), W vacancy(Vw) defect is systematically studied in this work. Impacts of Vw defect's positions are characterized in WSe2 TTETs by using rigorous ab initio simulations. It is found that Vw defect that locates in the tunnel junction will increase Ion, while it has no impact on Toff. Further discussions are also made with focus on the variation of defect position in TFET and the fluctuations of device performance for robust circuit design. © 2017 JSAP.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051090701&doi=10.23919%2fSNW.2017.8242271&partnerID=40&md5=7907da2a3157eadc81b98dfc3d553ade
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