标题:Analysis of interface trap states in InAlN/AlN/GaN heterostructures
作者:Zhou, Yang; Lin, Zhaojun; Luan, Chongbiao; Zhao, Jingtao; Yang, Qihao; Yang, Ming; Wang, Yutang; Feng, Zhihong; Lv, Yuanjie
作者机构:[Zhou, Yang; Lin, Zhaojun; Luan, Chongbiao; Zhao, Jingtao; Yang, Qihao; Yang, Ming; Wang, Yutang] Shandong Univ, Sch Phys, Jinan 250100, Peoples R Chi 更多
通讯作者地址:[Zhou, Y]Shandong Univ, Sch Phys, Jinan 250100, Peoples R China.
来源:SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版年:2014
卷:29
期:9
DOI:10.1088/0268-1242/29/9/095011
关键词:InAlN/AlN/GaN HFETs; trap states; strain; AlN interlayer
摘要:Gate-source frequency-dependent capacitance and conductance measurements were performed on the In0.17Al0.83N/AlN/GaN heterostructure field-effect transistor with side-Ohmic contacts to study the characteristics of trap states at the interface between InAlN and GaN. The values of interface trap state density and time constant were determined to be (0.96-3.36)x10(13) cm(-2) eV(-1) and (0.29-1.61) mu s, respectively. We calculated the strain in the InAlN barrier layer under the gate and found that the InAlN barrier layer was compressively strained with the in-plane strain of 1.31%. This is a possible reason for such a high interface trap state density which is not as low as supposed in the lattice-matched heterostructures.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:4
Scopus被引频次:3
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84906535946&doi=10.1088%2f0268-1242%2f29%2f9%2f095011&partnerID=40&md5=f488eed24c45eba24ef6bb5050060388
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