标题：Theoretical investigation on Surface Kinetics of the SiC Single Crystal Growth
作者：Peng Yan; Yang Xianglong; Chen Xiufang; Hu Xiaobo; Xu Xiangang; Yu Peng; Wang Ruiqi
通讯作者：Hu, XB;Xu, XG;Hu, XB;Xu, XG
作者机构：[Peng Yan; Yang Xianglong; Chen Xiufang; Hu Xiaobo; Xu Xiangang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.; [Peng Yan 更多
会议名称：13th China International Forum on Solid State Lighting / International Forum on Wide Bandgap Semiconductors China (SSLChina - IFWS)
会议日期：NOV 15-17, 2016
来源：2016 13TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS)
摘要：According to the BCF theory, a simple surface diffusion model of SiC single crystal was established, and the key parameters such as the surface diffusion length, the critical nucleation and growth rate were obtained by theoretical calculation. The results show that surface diffusion length is 460nmat 2400K and it decreases with the rise of temperature. The relationship between the critical nucleation and the temperature was analyzed. For silicon surface, the critical saturation is decreased with the increase of temperature. Compared with silicon surface, the critical saturation of carbon surface is smaller and almost constant with the increase of temperature. That means, under the same saturation, two-dimensional nucleation occurs on the carbon surface. The growth rate of SiC was obtained using the surface diffusion length, the critical saturation and chemical equilibrium constant of reaction system. And the value was in agreement with the experimental results.