标题:from Materials to Devices
作者:Xutang Tao;Jiandong Ye;Shibing Long;Zhitai Jia
作者机构:[Xutang Tao;Jiandong Ye;Shibing Long;Zhitai Jia]Shandong University.;[Xutang Tao;Jiandong Ye;Shibing Long;Zhitai Jia]Nanjing University.;[Xutang Tao;J 更多
来源:Journal of Semiconductors
出版年:2019
期:01
页码:11
关键词:from Materials to Devices;Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide;
摘要:As one of the ultra-wide bandgap (UWBG) semiconducting materials, gallium oxide has attractive properties with a wide bandgap of about 4.8 eV and a high breakdown field of about 8 MV/cm, which offers an alternative platform for various applications such as high performance power switches, RF ampl...
资源类型:期刊论文
原文链接:http://kns.cnki.net/kns/detail/detail.aspx?FileName=BDTX201901006&DbName=CJFQ2019
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