标题:Oxygen vacancies modulated coexistence of antiferromagnetism and ferromagnetism in Zn x Co 1−x O single crystal epitaxial films
作者:Cai L.; Cao Q.; Zhang K.; Fu M.; Liu J.; Huang Q.; Tian Y.; Liu G.;等 更多
作者机构:[Cai, L] School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China;[ Cao, Q] Spintronics Institute, Univ 更多
通讯作者:Yan, S(shishenyan@sdu.edu.cn)
通讯作者地址:[Yan, S] School of Physics, State Key Laboratory of Crystal Materials, Shandong UniversityChina;
来源:Journal of Magnetism and Magnetic Materials
出版年:2019
卷:473
页码:320-323
DOI:10.1016/j.jmmm.2018.10.101
关键词:Antiferromagnetic material; Epitaxial film; Exchange bias; Oxygen vacancy
摘要:Recently antiferromagnetic materials become very attractive due to their new applications in spintronic devices. High-quality single crystal epitaxial Zn x Co 1−x O (1 1 1) thin films were grown by co-evaporating Zn and Co and simultaneously oxidizing in oxygen plasma. It is found that the exchange bias fields of Co/as-prepared Zn x Co 1−x O bilayers decrease with increasing Zn composition. When as-prepared Zn x Co 1−x O layer was annealed in oxygen plasma to remove oxygen vacancies, the exchange bias field of Co/oxygen-plasma-annealed Zn x Co 1−x O bilayers can be further enhanced. Moreover, a weak ferromagnetism was observed at 300 K in the as-prepared antiferromagnetic Zn x Co 1−x O film with oxygen vacancies, but it did not exist in oxygen-plasma-annealed Zn x Co 1−x O film. This indicates that oxygen vacancies can simultaneously weaken the antiferromagnetism but enhance the ferromagnetism of Zn x Co 1−x O layer. Therefore, we offer a method of manipulating the antiferromagnetism of Zn x Co 1−x O films by changing Zn composition and oxygen vacancies, which is useful for designing antiferromagnetic spintronic devices. © 2018 Elsevier B.V.
收录类别:SCOPUS
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85055510894&doi=10.1016%2fj.jmmm.2018.10.101&partnerID=40&md5=9e409a9e160aaaa6b33264a688290af4
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