标题：Growth and thermal annealing effect on infrared transmittance of ZnGeP_2 single crystal
作者：Guodong Zhang;Xutang Tao;Shanpeng Wang;Guandong Liu;Qiong Shi;Minhua Jiang
作者机构：[Zhang, G] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Tao, X] State Key Laboratory of Crystal Materials, Sh 更多
会议名称：16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14)
会议日期：AUG 08-13, 2010
来源：Journal of Crystal Growth
关键词：A1. Point defects;A2. Single crystal growth;A2. Bridgman technique;B1. Phosphides;B2. Nonlinear optic materials
摘要：A crack-free ZnGeP_2 single crystal of diameter Φ8 and 40 mm length, with FWHM of 39.6\", was grown using the ACRT Bridgman method. The absorption of ZnGeP_2 in the near and middle infrared spectrum was studied at different thermal annealing conditions, i.e., in vacuum, P atmosphere and ZnGeP_2 atmosphere conditions, respectively. Annealing in vacuum at 600℃ for 300 h, the transmittance near 1 urn is increased while the transmittance beyond 1.6 μm is decreased. Annealing in 3 atm P atmosphere at 600℃ for 300 h after annealed in vacuum, the transmittance is increased in the whole range. Annealing in ZnGeP_2 atmosphere at 600℃ for 300 h after former two thermal treatment steps, the transmittance is further increased. The effects of thermal annealing are discussed in connection with possible mechanisms of point defects related optical absorption in ZnGeP_2.