标题:Large energy pulse generation modulated by graphene epitaxially grown on silicon carbide
作者:Yu, H.;Chen, X.;Zhang, H.;Xu, X.;Hu, X.;Wang, Z.;Wang, J.;Zhuang, S.;Jiang, M.
作者机构:[Yu, H] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China;[ Chen, X] State Key Labor 更多
通讯作者:Zhang, H
通讯作者地址:[Zhang, HJ]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:ACS nano
出版年:2010
卷:4
期:12
页码:7582-7586
DOI:10.1021/nn102280m
关键词:composites;grapheme;laser;Q-switcher
摘要:Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:62
Scopus被引频次:72
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650741871&doi=10.1021%2fnn102280m&partnerID=40&md5=d69212f1718607f7256443ef74a2a016
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