标题：Large energy pulse generation modulated by graphene epitaxially grown on silicon carbide
作者：Yu, H.;Chen, X.;Zhang, H.;Xu, X.;Hu, X.;Wang, Z.;Wang, J.;Zhuang, S.;Jiang, M.
作者机构：[Yu, H] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China;[ Chen, X] State Key Labor 更多
通讯作者地址：[Zhang, HJ]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
摘要：Graphene grown by thermal decomposition of a two-inch 6H silicon carbide (SiC) wafers surface was used to modulate a large energy pulse laser. Because of its saturable absorbing properties, graphene was used as a passive Q-switcher, and because of its high refractive index the SiC substrate was used as an output coupler. Together they formed a setup where the passively Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) crystal laser was realized with the pulse energy of 159.2 nJ. Our results illustrate the feasibility of using graphene as an inexpensive Q-switcher for solid-state lasers and its promising applications in integrated optics.