标题:Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer
作者:Guan, Xiao-Jun; Ji, Xiang
通讯作者:Guan, XJ;Guan, XJ
作者机构:[Guan, Xiao-Jun; Ji, Xiang] Shandong Univ, Sch Mat Sci & Engn, Jinan 250061, Peoples R China.; [Guan, Xiao-Jun; Ji, Xiang] Shandong Univ, State Key 更多
会议名称:4th International Conference on Machinery, Materials and Computing Technology (ICMMCT)
会议日期:JAN 23-24, 2016
来源:PROCEEDINGS OF THE 2016 4TH INTERNATIONAL CONFERENCE ON MACHINERY, MATERIALS AND COMPUTING TECHNOLOGY
出版年:2016
卷:60
页码:1894-1898
关键词:phase field simulation; silicon wafer; low temperature annealing;; initial vacancy concentration; annealing temperature; oxygen clusters
摘要:In order to investigate the dual effect of initial vacancy concentration and annealing temperature on oxygen clusters' evolution in RTP-treated silicon wafer during low temperature annealing, an established phase-field model and the optimum design method based on response surface was used to simulated the processes of oxygen clusters' evolution under their different combined conditions. The results show that the comprehensive influence of initial vacancy and annealing temperature on oxygen clusters mainly comes from their respective effects, and when initial vacancy concentration is higher than 1x10(15) cm(-3) and annealing temperature changes from 1075 K to 1175 K,the more numerous oxygen clusters can generate in the process of low temperature annealing.
收录类别:CPCI-S
资源类型:会议论文
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