标题:Thermoelectric properties of indium-doped zinc oxide sintered in an argon atmosphere
作者:Ullah, Mati; Wang Chunlei; Su, Wen-Bin; Manan, Abdul; Ahmad, Arbab Safeer; Rehman, Ata Ur
作者机构:[Ullah, Mati; Wang Chunlei; Su, Wen-Bin] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; [Wang Chunlei] Shandong Univ, MOE State 更多
通讯作者:Ullah, Mati;Ullah, M;Wang, CL;Wang, CL
通讯作者地址:[Ullah, M; Wang, CL]Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;[Wang, CL]Shandong Univ, MOE State Key Lab Crystal Mat, Jinan 250 更多
来源:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版年:2019
卷:30
期:5
页码:4813-4818
DOI:10.1007/s10854-019-00775-6
摘要:Solid-state reaction (SSR) was used to synthesize samples of (Zn1-xInx)O, with x=0.05, 0.02, 0.01, 0.005 and0.00 respectively. All compositions were sintered in an argon atmosphere and their thermoelectric properties, phase constituents, and microstructures were investigated. Single-phase ceramic was formed for each composition with dense microstructure. In3+ doping lowered the electrical resistivity of ZnO and in the present study, lower value of electrical resistivity 1.884 mcm and highest power factor (P.F) 4.660x10(-4)WK(-2)m(-1) at 693.4 degrees C respectively are obtained for the composition with x=0.02. The electrical resistivities () of all compositions were regulated. The tuned and regulated() are expected to be helpful for future thermoelectric devices.
收录类别:EI;SCOPUS;SCIE
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061024494&doi=10.1007%2fs10854-019-00775-6&partnerID=40&md5=2862dcc4b8c3b067e159315bdfdaa1ae
TOP