标题：Thermoelectric properties of indium-doped zinc oxide sintered in an argon atmosphere
作者：Ullah, Mati; Wang Chunlei; Su, Wen-Bin; Manan, Abdul; Ahmad, Arbab Safeer; Rehman, Ata Ur
作者机构：[Ullah, Mati; Wang Chunlei; Su, Wen-Bin] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; [Wang Chunlei] Shandong Univ, MOE State 更多
通讯作者：Ullah, Mati;Ullah, M;Wang, CL;Wang, CL
通讯作者地址：Ullah, M; Wang, CL (corresponding author), Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; Wang, CL (corresponding author), Shandon 更多
来源：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
摘要：Solid-state reaction (SSR) was used to synthesize samples of (Zn1-xInx)O, with x=0.05, 0.02, 0.01, 0.005 and0.00 respectively. All compositions were sintered in an argon atmosphere and their thermoelectric properties, phase constituents, and microstructures were investigated. Single-phase ceramic was formed for each composition with dense microstructure. In3+ doping lowered the electrical resistivity of ZnO and in the present study, lower value of electrical resistivity 1.884 mcm and highest power factor (P.F) 4.660x10(-4)WK(-2)m(-1) at 693.4 degrees C respectively are obtained for the composition with x=0.02. The electrical resistivities () of all compositions were regulated. The tuned and regulated() are expected to be helpful for future thermoelectric devices.